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SPP02N60S5 Cool MOSTM Power Transistor
Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance
P-TO220-3-1
VDS RDS(on) ID
600 3 1.8
PG-TO220
2
V A
1
23
Type
Package
Ordering Code
SPP02N60S5
PG-TO220
Q67040-S4181
Marking 02N60S5
Maximum Ratings Parameter
Continuous drain current
TC = 25 C TC = 100 C
Symbol
ID
Value
1.8 1.1
Unit
A
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
I D = 1.35 A, VDD = 50 V
I D puls EAS
3.2 50 0.07 1.8 20
30
mJ
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
I D = 1.8 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz)
Power dissipation, T C = 25C
A V W C
VGS Ptot T j , T stg
25 -55... +150
Operating and storage temperature
Rev. 2.7
Page 1
2009-11-26
SPP02N60S5
Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, ID = 1.8 A, Tj = 125 C
Symbol dv/dt
Value 20
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 3)
Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS
ID=80, VGS=VDS VDS=600V, VGS=0V, Tj=25C, Tj=150C
Symbol min.
RthJC RthJA
Values typ. 35 max. 5 62 62 260 -
Unit K/W
RthJA
Tsold
-
C
Values typ. 700 4.5 0.5 2.7 7.3 max. 5.5 600 3.5 -
Unit V
V(BR)DS VGS=0V, ID=1.8A
A 1 50 100 3 nA
Gate-source leakage current
IGSS
VGS=20V, VDS=0V VGS=10V, ID=1.1A, Tj=25C Tj=150C
Drain-source on-state resistance RDS(on)
Rev. 2.7
Page 2
2009-11-26
SPP02N60S5
Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Characteristics
Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD=350V, ID=1.8A, VGS=0 to 10V VDD=350V, ID=1.8A
Symbol
Conditions min.
Values typ. 1.4 240 77 4.4 35 35 35 20 max. 42 30
Unit
g fs Ciss Coss Crss t d(on) tr t d(off) tf
V DS2*I D*RDS(on)max,
ID=1.1A
-
S pF
V GS=0V, V DS=25V, f=1MHz
V DD=350V, V GS=0/10V,
ID=1.8A, RG=50
ns
-
2.3 4.5 7.3 8
9.5 -
nC
V(plateau) VDD=350V, ID=1.8A
V
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220C, reflow
Rev. 2.7
Page 3
2009-11-26
SPP02N60S5
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr
VGS=0V, IF=IS VR=350V, IF =IS , di F/dt=100A/s
Symbol IS ISM
Conditions min.
TC=25C
Values typ. 1 860 1.6 max. 1.8 3.2 1.2 1460 -
Unit A
V ns C
Typical Transient Thermal Characteristics Symbol Value typ. Unit Symbol Value typ. Unit
Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.1 0.184 0.306 1.207 0.974 0.251 K/W
Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00002806 0.0001113 0.0001679 0.000547 0.001388 0.019 Ws/K
Tj
R th1
R th,n
T case
E xternal H eatsink
P tot (t) C th1 C th2 C th,n
T am b
Rev. 2.7
Page 4
2009-11-26
SPP02N60S5
1 Power dissipation 2 Safe operating area
Ptot = f (TC)
28
SPP02N60S5
ID = f ( V DS ) parameter : D = 0 , T C=25C
10 1
W
24 22 20
A
Ptot
16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 10 -1
ID
18
10 0
tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
C
160
10 -2 0 10
10
1
10
2
TC
10 V VDS
3
3 Typ. output characteristic
4 Drain-source on-state resistance
ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS
6
20V
RDS(on) = f (Tj) parameter : ID = 1.1 A, VGS = 10 V
17
SPP02N60S5
14
A
12V
RDS(on)
12 10 8 6 4 2 0 -60 98% typ
ID
4
10V
3
9V 8.5V 8V
2
1
7.5V 7V 6V
0 0
5
10
15
V VDS
25
-20
20
60
100
C
180
Tj
Page 5
Rev. 2.7
2009-11-26
SPP02N60S5
5 Typ. transfer characteristics 6 Typ. gate charge VGS = f (Q Gate) parameter: ID = 1.8 A pulsed
16
V 0.2 VDS max
SPP02N60S5
ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s
6
A
12 0.8 VDS max
VGS
ID
4
10
3
8
6 2 4 1 2
0 0
4
8
12
VGS
20
0 0
1
2
3
4
5
6
7
8
nC
10
V
Q Gate
7 Forward characteristics of body diode
8 Avalanche SOA
IF = f (VSD) parameter: Tj , tp = 10 s
10
1 SPP02N60S5
IAR = f (tAR) par.: Tj 150 C
2
A
A
1.6 10 0 1.4
T j(START)=25C
IF
IAR
1.2 1 0.8
10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 0.6 0.4 0.2
Tj(START)=125C
0 -3 10
10
-2
10
-1
10
0
10
1
10
2
VSD
s 10 t AR
4
Rev. 2.7
Page 6
2009-11-26
SPP02N60S5
9 Avalanche energy 10 Drain-source breakdown voltage V(BR)DSS = f (Tj)
720
SPP02N60S5
EAS = f (Tj) par.: ID = 1.35 A, VDD = 50 V
50
V mJ
V(BR)DSS
C
680 660 640 620
EAS
30
20 600 580 560 0 20 540 -60
10
40
60
80
100
120
160
-20
20
60
100
C
180
Tj
Tj
11 Typ. capacitances
C = f (VDS) parameter: V GS=0V, f=1 MHz
10 4
pF
10 3
Ciss
C
10 2
Coss
10 1
Crss
10 0 0
10
20
30
40
50
60
70
80
V 100 VDS
Rev. 2.7
Page 7
2009-11-26
SPP02N60S5
Definition of diodes switching characteristics
Rev. 2.7
Page 8
2009-11-26
SPP02N60S5
PG-TO220-3-1, PG-TO220-3-21
Rev. 2.7
Page 9
2009-11-26
SPP02N60S5
Rev. 2.7
Page 10
2009-11-26

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